Bipolar Transistors - Voltage Amplifiers

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Bahan KuliahElektronika DasarPertemuan ke 11FIELD EFFECT TRANSISTORIr Bambang Sutopo M Phil.
Jurusan Teknik Elektro DRIVER RELAY diskusi tugas lalu VCC VBE freewheel2 I B JENUH.
IB JENUH arus basisyang membuat transistordalam kondisi jenuh Relay membutuhkan arussekitar 50 sampai.
100 mili Amper TRANSISTOR SBG BUFER OP AMPInput 1 relayR harus bisa membatasi arus agar arus yang dikeluarkanop amp tak terlalu besar .
R harus masih dapat membuat transistor jenuh Pilihan R tergantungkemampuan ICmengeluarkan arusR source .
dimasuki arus Tegangan VCE vs Hambatan BasisTegangan VCE mV 1500 DaerahTak stabil.
10 10 10 10 10 5 Arus Basis vs Hambatan BasisArus Basis mA 10 10 10 10 10 6 Arus Basis Tegangan VCE dan Hambatan Basis.
Arus Basis mA Tegangan VCE mV Arus Basis Tegangan VCE dan Hambatan BasisArus Basis mA Tegangan VCE mV 100 200 300 400 500 600 700 800 900 1000 8 LM 339 239.
TOTEM POLE OUTPUT SOURCE CURRENT SINK CURRENT LM 124 234 324 PROYEK KITA.
DIODA KOMPARATORFOTO SCHMITT Field Effect Transistor FETMengapa kita masih perlu transistor jenisBJT mempunyai sedikit masalah .
BJT selalu memerlukan arus basis IB walaupun arus ini kecil tetapi tidak bisadiabaikan terutama sekali saat BJTdigunakan sebagai saklar pasti dibutuhkanarus yang cukup besar untk membuat.
transistor jenuh 22 Field Effect Transistor FETApakah ada jenis transistor lain yang bisadigerakkan dengan tegangan tanpamembutuhkan arus .
Jawabannya ada di FET Dengan perantaraan FET kita dapat menghubungkanperalatan komputer atau transduser yang tidak bisamenghasilkan arus dengan alat yang lebih besar FET bisa digunakan sbg bufer sehingga tidak.
membutuhkan arus dari komputer trasduser Teknologi modern pembuatan IC ternyata dimensi transistorFET bisa dibuat sangat kecil sehingga pembuatan IC saat 23iniberdasarkan transistor FET ini FET vs BJT.
Gate G Base B Drain D Collector C Emitter E Base currentGate Voltage.
Collector currentDrain currentCollector Emitter VoltageDrain source voltage Jenis jenis FET.
JFET Junction FET MOSFET Metal Oxide Silikon FET PMOS MOS saluran P NMOS MOS saluran N Masih banyak lagi.
Parameter FET ID VGS VDS Dasar pemikiran FET ISAda arus ID IS yang mengalir melaluisaluran yang besarnya saluran dikendalikanoleh tegangan VGS .
Karena arus lewat saluran yang berupahambatan maka ada tegangan VDS Junction FETs JFET saluran N aerah deplesi membesar dengan bertambahnya tegangan ba.
Saluran N Arus Drain current vs tegangan drain ke source tegangan gate source 0 35 n Channel FET for vGS 0 Typical drain characteristics of an n channel JFET .
If vDG exceeds the breakdown voltage VB drain current increases rapidly 38 KURVA KARAKTERISTIK Junction FETVGS dan IDI D k VGS VP .
k konstantaVP tegangan pinch off atau threshold Arus dibatasi hanya saat tegangan VGS 0 40 Junction FET Sumber ArusKurva tak dipengaruhi tegangan VDS .
Arus hanya dipengaruhi VGS bukan VDS RS membuat VGS selalu negatip Misalnya RS 4K VGS 4 V Arus di Rload 1 mA KURVA VDS ID Junction FET.
Linear Ada dua daerah operasiSaturationsaturationLinear I D k VGS VP VDS .
Saturation I D 2k VGS VP VDS JFET variable resistorFor low values of VDS theslopes change froma resistance.
5v 2 7mA 1 9k toRG a resistance 5v 10mA 0 5k A resistance iscontrolled by an.
input voltage VDS DRAIN SOURCEVOLTAGE Volts This makes it possible to have an elementin a circuit that can be electronicallyadjusted 43.
JFET variable resistor 2 VDD Now lets analyze the circuit In the linear regionwe had a relationship between ID and VDS VDS I D 2k VGS VT VDS .
RD 2 To find the effective resistance this is the voltageRG across the channel divided by the current throughthe channel 1 ID VDS .
2k VGS VT RDS VDS 2 If it wasn t for the last term we would have a value of 1 RDS that wasproportional to VGS the control voltage and didn t depend on VDS remember VT is a constant of the FET the pinch off voltage This is like.
a resistor and it forms a VOLTAGE DIVIDER with RD 44 n Channel depletion MOSFET n Channel enhancement MOSFETshowing channel length L and channel width W n Channel depletion MOSFET.
showing channel length L and channel width W enhancement mode n channel MOSFET vGS Vto pn junction antara drain danbody reverse biased iD 0 49 Terbentuk saluran N.
vGS Vto pn junction antara drain danbody reverse biased iD 0 50 For vGS Vto the pn junction between drain and bodyis reverse biased and iD 0 51 vGS Vto terbentuk saluran n .
vGS bertambah saluran membesar vDS kecil I D sebanding dengan vDS resistor tergantung nilai vGS vDS bertambah saluran mengecil di drain danLaju pertambahan iD melambat.
Saat vDS vGS Vto iD tetap Threshold Voltage Kurva karakteristik transistor NMOS Drain characteristics Rangkaian penguat sederhana menggunakan NMOS .
Drain characteristics and load line vDS versus time Graphical solution The more nearly horizontal bias line results in less change in the Q point Sinyal campuran.
Rangkaian Ekivalen FET Rangkaian ekivalen FET iD terpengaruh vDS Penentuan gm dan rd Common source amplifier Rangkaian Ekivalen Common Source amplifier .
Common source amplifier dengan nilai R vo t dan vin t versus time 71 Gain magnitude versus frequency Source follower Rangkaian Ekivalen Source Follower .
Common gate amplifier n Channel depletion MOSFET Drain current versus vGS in the saturation regionfor n channel devices p Channel FET circuit symbols .
Sama n channel devices kecuali arah panah 78 MOSFET switchRLOAD IRF510Power MOSFET dapat dialiri arus.
VGS besar sampai 75 A dan daya 150 W Saat ON punya hambatan sekitar 10Contoh IRF510Mempunyai arus maksimum 5 6 Adab hambatan saat ON 0 4 Ohm 79.
MOSFET switch 2 log scale Kurva ID vs VGS Ideal saklar saat OFF Arus 0 .
Dari kuva terlihat Tegangan VGS 3 volt ID 0 5V arus besar In this device the gate controls hole.
source P MOS drainflow from source to drain It is made in n type n type Si VGS Vt What if we apply a big negative.
gate voltage on the gate If VGS Vt both negative p p then we induce a charge onn type Si the surface holes NMOS and PMOS Compared.
Body p type Body n typeSource n type Source p typeDrain n type Drain p typeVGS positive VGS negativeVT positive VT negative.
VDS positive VDS negativeID positive into drain ID negative into drain VGS 3V VGS 3V for IDS for IDS .
1mA VGS 0 VGS 01 2 3 4 1 2 3 4 CIRCUIT SYMBOLSNMOS circuit symbol PMOS circuit symbolA small circle is drawn at the gate.
to remind us that the polarities arereversed for PMOS PMOS Transistor Switch ModelOperation compared to NMOS It is complementary Switch OPEN Switch CLOSED D.
For PMOS for the normal circuit connection is to connectS to VDD The function of the device is a pull up Switch is closed Drain D is connected to Source S when VG 0Switch is open Drain D is disconnected from Source S when VG VDD.
TRANSISTOR SBG BUFER OP-AMP + _ Input 1 Input 2 relay R R harus bisa membatasi arus agar arus yang dikeluarkan op-amp tak terlalu besar. R harus masih dapat membuat transistor jenuh. Pilihan R tergantung kemampuan IC mengeluarkan arus (source) atau dimasuki arus (sink) relay relay relay 200mA 100mA R 25mA R Eka Ardi Daerah Tak stabil Eka Ardi ...

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