HV MOSFET Modeling with HiSIM_HV

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Hiroshima UniversityHV MOSFET Modeling with HiSIM HVBenchmarks and New DevelopmentsEhrenfried Seebacher Mitiko Muira Matausch Kund Molnar2011 09 16.
Hiroshima University Presentation OverviewHV Transistoraustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz 2011 austriamicrosystems AG Material may not be reproduced without written approval of.
Compact Modeling Requirements HV transistor sub circuit modeling the reference State of the art HV Transistor Compact Models HiSIM HV 1 x and 2 x Benchmarking DC AC.
SummaryAll rights reserved 2 2011 austriamicrosystems Hiroshima University FOMs for HV Transistor Modeling.
austriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz 2011 austriamicrosystems AG Material may not be reproduced without written approval of RON On Resistor high vgs low vds and temp IDSAT Saturation Current s t as VT long short.
Cgg Cgd Miller Cap lu d ess leh o oc sib Analog parameter for long channel length l s r os RF Parameter FT FMAX dAll rights reserved .
3 2011 austriamicrosystems Hiroshima University HV CMOS Transistor Typesaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz 2011 austriamicrosystems AG Material may not be reproduced without written approval of.
Increased junction breakdown voltage BV of the drain diffusion is achievedby using a deep drain wellSmall on resistance and high BV are contrary effects The optimization of the tradeoff between NWELL.
both quantities is of major interest The gate length is extended beyond the body drainwell junction which increases the junction BV The gate acts as a field plate to bends the electric field All rights reserved .
RESURFeffectQuasi Saturation Effect 4 2011 austriamicrosystemsSub circuit ModelingHiroshima University .
All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz Hiroshima University Sub circuit Model Features and Limitations.
HV MOS Transistor Model Features Model Limitations austriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz 2011 austriamicrosystems AG Material may not be reproduced without written approval of Basic geometrical and process related aspects.
RF modelingsuch as oxide thickness junction depth effective SH modelingchannel length and width RON modeling Cgd Cgg .
Quasi saturation region and the saturation region Graded channel Geometry scaling Short channel effects Impact ionization in the drift region 1 f and thermal noise equation High side switch sub circuit extension needed Temperature Modeling for RON VT IDSAT High Voltage Parasitic Models.
Bulk Substrate current Effects of doping profiles substrate effect Modeling of weak moderate and stronginversion behaviorAll rights reserved .
Parasitic bipolar junction transistor BJT 6 2011 austriamicrosystems Hiroshima University State of the Art HV Compact Models and new DevelopmentsEKV HV Transistor.
austriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz Under development within the EU Project COMON 2011 austriamicrosystems AG Material may not be reproduced without written approval of A Physics Based Analytical Compact Model for the Drift Region of the HV MOSFET Antonios Bazigos Fran ois Krummenacher Jean MichelSallese Matthias Bucher Ehrenfried Seebacher Werner Posch Kund Moln r and Mingchun Tang.
PSP HV Transistor Model In development based on PSP surface potential model asymmetrical surface potential based LDMOS model developed byNXP Research CMC Standard model version 1 1 2 and 1 2 1.
All rights reserved Version 2 0 0 in evaluation7 2011 austriamicrosystems Hiroshima University Extension of Bulk MOSFET Model HiSIM2.
Complete Surface Potential Based Modelaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz 2011 austriamicrosystems AG Material may not be reproduced without written approval offS0 at source edgefSL at the end of the gradual channel approx .
fS DL at drain edge calculated from fSL Beyond Gradual Channel Approximation Channel Length Modulation Overlap CapacitanceAll rights reserved .
2011 austriamicrosystems HiSIM HVVbs eff Vbs Ids x RsVgs eff Vgs Ids x Rs Asymmetric .
potential dropVds eff Vds Ids x Rs Rdrift Symmetric a few hundred volts Bias Range a few voltsHiroshima University .
All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz Hiroshima University Consistent Modeling in Drift Region.
austriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz 2011 austriamicrosystems AG Material may not be reproduced without written approval ofPotential dropin the drift regionAll rights reserved .
Y OritsukiDDPet al IEEE TED 57 p 2671 2010 Y Oritsuki et al IEEE TED 57 p 2671 2010 11 2011 austriamicrosystemscharacteristics.
fS DL potential determiningfS DL V fS DL V Key Potential ValuesfS DL V fS DL V HiSIM reproduces fS DL calculated by 2D device simulator .
Hiroshima University All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz Modeling of Rdrift.
HiSIM HV 1 0 0 SeriesY Oritsuki et al IEEE TED 57 p 2671 2010 Bias Dependence is modeled based on principle Hiroshima University All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of.
2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz HiSIM HV ResultsAccuracy Comparison of Ids Vds 2D Device Simulation Results.
Quasi saturation behavior of LDMOS is reproduced Hiroshima University All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz .
Relatively High Breakdown VoltageRelatively Low Breakdown VoltageCurrent Voltage CharacteristicsHiroshima University All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of.
2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz Empirical Model IssuesGm vs VgsHiroshima University .
All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval ofCare must be taken when adjusting critical parameters describing the Vgs dependence 2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz HiSIM HV 1 1 2 v BSIM3v3 Subcircuit.
Model Benchmark Output CharacteristicHiroshima University All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz .
Capacitance fF Normal MOSFETAsymmetrical LDMOSCapacitance fF Capacitance Voltage Characteristics.
Symmetrical HVMOSHiroshima University All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz .
AC Modeling CggBSIM3 JFETS Subckt HiSIM HV good fitting quality in all regions Subcircuit bad fitting quality especially in accumulation Hiroshima University .
All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz Self Heating Effect for DC AnalysisHiroshima University .
All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz RC Network Self Heating Effect for AC Analysis.
Hiroshima University All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz Modeling Rdrift.
MOSFET ResistorHiSIM HV 2 0 0 SeriesHiroshima University All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystems.
austriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz Node potential Vddp is solved iteratively Hiroshima University All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystems.
austriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz I V Characteristics of Resistor2D Device SimulationVelocity saturation affects strongly on I V characteristics Hiroshima University .
All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz Hiroshima University Modeling Current Flow in Overlap Region.
austriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz 2011 austriamicrosystems AG Material may not be reproduced without written approval ofWdep W0 Iddp W xov q n drift Djunc Wjunc W0 A Wdep .
W junc D Lover junc xdep xjuncW0 Lover2 Djunc 2.
Djunc junction depth current exude coefficient intoAll rights reserved Vddp depletion region25 2011 austriamicrosystems.
Hiroshima University Verification of I V Characteristics Lch 1mm Lover 1mm Djunc 2mm 2D Device Sim austriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz 2011 austriamicrosystems AG Material may not be reproduced without written approval of.
Vds 0 5V 2V 5V 10 30VVds 0 5V 2V 5V 10 30V Vds 0 5V 2V 5V 10 30VVgs V xov improvements Vgs V The xov modelenables to fit I V Vgs 3 9V 15V 30V.
characteristicsAll rights reserved Vgs 3 9V 15V 30V for wide range Vgs 3 9V 15V 30Vconditions Vds V 27 2011 austriamicrosystems.
HiSIM HV 1 x x Old EmpiricalGm vs VgsEmpirical Model vs Physical Model IdVgHiSIM HV 2 x x New PhysicalHiroshima University .
All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz HiSIM HV 1 x x Old EmpiricalEmpirical Model vs Physical Model IdVd.
HiSIM HV 2 x x New PhysicalHiroshima University All rights reserved 2011 austriamicrosystems AG Material may not be reproduced without written approval of 2011 austriamicrosystemsaustriamicrosystems and may only be used for noncommercial educational purposes at the University of Technology Graz .
HiSIM HV ReleaseHiroshima University State of the Art HV Compact Models and new Developments. EKV HV Transistor. Under development within the EU Project COMON “A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET” AntoniosBazigos, François Krummenacher, Jean-Michel Sallese, Matthias Bucher, EhrenfriedSeebacher, Werner Posch, KundMolnár, and Mingchun Tang

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