MOSFET

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POWERPOINT PRESENTATION BY POONAM SHARMALECTURER ELECTRICALGP MANESAR The MOSFET.
there is another type of Field Effect Transistor available whose Gateinput is electrically insulated from the main current carrying channeland is therefore called an Insulated Gate Field Effect Transistor The most common type of insulated gate FET which is used in manydifferent types of electronic circuits is called the Metal Oxide.
The IGFET or MOSFET is a voltage controlled field effect transistor that differs from aJFET in that it has a Metal Oxide Gate electrode which is electrically insulated from themain semiconductor n channel or p channel by a very thin layer of insulating materialusually silicon dioxide commonly known as glass This ultra thin insulated metal gate electrode can be thought of as one plate of a.
capacitor The isolation of the controlling Gate makes the input resistance ofthe MOSFET extremely high way up in the Mega ohms M region thereby making italmost infinite As the Gate terminal is isolated from the main current carrying channel NO current flowsinto the gate and just like the JFET the MOSFET also acts like a voltage controlled.
resistor were the current flowing through the main channel between the Drain and Sourceis proportional to the input voltage Also like the JFET the MOSFETs very high inputresistance can easily accumulate large amounts of static charge resulting inthe MOSFET becoming easily damaged unless carefully handled or protected MOSFETs are available in two basic forms .
Depletion Type the transistor requires the Gate Source voltage VGS to switch the device OFF The depletion mode MOSFET isequivalent to a Normally Closed switch Enhancement Type the transistor requires a Gate Source voltage VGS to switch the device ON The enhancement mode MOSFET is.
equivalent to a Normally Open switch The symbols and basic constructionfor both configurations of MOSFETsare shown below The construction of the Metal Oxide Semiconductor.
FET is very different to that of the Junction FET Both the Depletion and Enhancement typeMOSFETs use an electrical field produced by a gatevoltage to alter the flow of charge carriers electrons for n channel or holes for P channel .
through the semiconductive drain source channel The gate electrode is placed on top of a very thininsulating layer and there are a pair of small n typeregions just under the drain and source electrodes We saw in the previous tutorial that the gate of a.
junction field effect transistor JFET must be biasedin such a way as to reverse bias the pn junction With a insulated gate MOSFET device no suchlimitations apply so it is possible to bias the gate ofa MOSFET in either polarity positive ve or.
Depletion mode MOSFET The Depletion mode MOSFET which is less common than the enhancement modetypes is normally switched ON conducting without the application of a gate biasvoltage That is the channel conducts when VGS 0 making it a normally closed device The circuit symbol shown above for a depletion MOS transistor uses a solid.
channel line to signify a normally closed conductive channel For the n channel depletion MOS transistor a negative gate source voltage VGS willdeplete hence its name the conductive channel of its free electrons switching thetransistor OFF Likewise for a p channel depletion MOS transistor a positive gate source voltage VGS will deplete the channel of its free holes turning it OFF .
In other words for an n channel depletion mode MOSFET VGS means more electronsand more current While a VGS means less electrons and less current The opposite isalso true for the p channel types Then the depletion mode MOSFET is equivalent to a normally closed switch Depletion mode N Channel MOSFET.
and circuit SymbolsThe depletion mode MOSFET is constructed in asimilar way to their JFET transistor counterpartswere the drain source channel is inherentlyconductive with the electrons and holes already.
present within the n type or p type channel Thisdoping of the channel produces a conducting pathof low resistance betweenthe Drain and Source with zero Gate bias Enhancement mode MOSFET.
The more common Enhancement mode MOSFET or eMOSFET is thereverse of the depletion mode type Here the conducting channel islightly doped or even undoped making it non conductive This results inthe device being normally OFF non conducting when the gate biasvoltage VGS is equal to zero The circuit symbol shown above for an.
enhancement MOS transistor uses a broken channel line to signify anormally open non conducting channel For the n channel enhancement MOS transistor a drain current will onlyflow when a gate voltage VGS is applied to the gate terminal greaterthan the threshold voltage VTH level in which conductance takes.
place making it a transconductance device WORKING OF N TYPE MOSFET The application of a positive ve gate voltage to a n type eMOSFET attracts more electronstowards the oxide layer around the gate thereby increasing or enhancing hence its name thethickness of the channel allowing more current to flow This is why this kind of transistor is.
called an enhancement mode device as the application of a gate voltage enhances the channel Increasing this positive gate voltage will cause the channel resistance to decrease furthercausing an increase in the drain current ID through the channel In other words for an n channel enhancement mode MOSFET VGS turns the transistor ON while a zero or V GS turnsthe transistor OFF Thus the enhancement mode MOSFET is equivalent to a normally open .
The reverse is true for the p channel enhancement MOS transistor When V GS 0 the device is OFF and the channel is open The application of a negative ve gate voltage to the p typeeMOSFET enhances the channels conductivity turning it ON Then for an p channelenhancement mode MOSFET VGS turns the transistor OFF while VGS turns the transistor Enhancement mode N Channel.
MOSFET and Circuit Symbols Enhancement mode MOSFETs make excellent electronics switches dueto their low ON resistance and extremely high OFF resistance aswell as their infinitely high input resistance due to their isolated gate Enhancement mode MOSFETs are used in integrated circuits to produce.
CMOS type Logic Gates and power switching circuits in the form of asPMOS P channel and NMOS N channel gates CMOS actually standsfor Complementary MOS meaning that the logic device has both PMOSand NMOS within its design .
Depletion-mode MOSFET. The Depletion-mode MOSFET, which is less common than the enhancement mode types is normally switched “ON” (conducting) without the application of a gate bias voltage.That is the channel conducts when V GS. = 0 making it a “normally-closed” device.. The circuit symbol shown above for a depletion MOS transistor uses a solid channel line to signify a normally closed ...

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